Form 8-K Navitas Semiconductor For: Jun 15

Mon, 15 Jun 2026 17:16:00 -0400

si-local-file:///var/storage/secattach/20260615/26648593.html

Form 8-K Navitas Semiconductor For: Jun 15

Mon, 15 Jun 2026 17:16:00 -0400

si-local-file:///var/storage/secattach/20260615/26648593.html

Form DEFA14A Navitas Semiconductor

Thu, 11 Jun 2026 16:13:00 -0400

si-local-file:///var/storage/secattach/20260611/26635780.html

Form DEFA14A Navitas Semiconductor

Thu, 11 Jun 2026 16:13:00 -0400

si-local-file:///var/storage/secattach/20260611/26635780.html

Navitas Semiconductor board member resigns immediately

Tue, 09 Jun 2026 16:19:46 -0400

Navitas Semiconductor Corporation (NASDAQ: NVTS) announced that Dr. Ranbir Singh resigned from its board of directors on June 9, 2026, effective immediately.

Dr. Singh had served as a board member since November 2024 and held the position of Chair of the Executive Steering Committee at the time of his resignation. The company stated that Dr. Singh's resignation did not provide any reason for his departure.

Navitas referenced Dr. Singh's prior filings on Schedule 13D dated April 23, 2026 and May 29, 2026 in connection with his resignation, according to the company's statement.

Navitas Semiconductor board member resigns immediately

Tue, 09 Jun 2026 16:19:46 -0400

Navitas Semiconductor Corporation (NASDAQ: NVTS) announced that Dr. Ranbir Singh resigned from its board of directors on June 9, 2026, effective immediately.

Navitas referenced Dr. Singh's prior filings on Schedule 13D dated April 23, 2026 and May 29, 2026 in connection with his resignation, according to the company's statement.

Form 8-K Navitas Semiconductor For: Jun 09

Tue, 09 Jun 2026 16:17:00 -0400

si-local-file:///var/storage/secattach/20260609/26623904.html

Form 8-K Navitas Semiconductor For: Jun 09

Tue, 09 Jun 2026 16:17:00 -0400

si-local-file:///var/storage/secattach/20260609/26623904.html

Navitas launches isolated package for SiC MOSFETs with thermal management

Mon, 08 Jun 2026 08:32:23 -0400

Navitas Semiconductor (NASDAQ: NVTS) announced the launch of its UHV-TO-247-4-ISO package designed for silicon carbide MOSFETs, according to a company statement.

The package features over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation for 1200 V to 3300 V GeneSiC SiC MOSFETs. The company states the package eliminates the need for external high-voltage isolation while providing thermal and electromagnetic interference performance improvements compared to standard non-isolated through-hole packages.

The package integrates an aluminum nitride substrate that offers high-voltage isolation exceeding 6000 V. A reflow-compatible thermal pad allows direct mounting to liquid- or air-cooled heat sinks, which the company claims

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Mon, 08 Jun 2026 08:30:00 -0400

Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
Developed for 3300V, 2300V, and 1200V SiC MOSFET products.

TORRANCE, Calif., June 08, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast^™ gallium nitride (GaN) and GeneSiC^™ silicon carbide (SiC) power semiconductors, today announced the launch of its new UHV-TO-247-4-ISO package, setting a new benchmark for high-performance discrete power devices.

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Mon, 08 Jun 2026 08:30:00 -0400

Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
Developed for 3300V, 2300V, and 1200V SiC MOSFET products.

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Mon, 08 Jun 2026 08:30:00 -0400

Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
Developed for 3300V, 2300V, and 1200V SiC MOSFET products.

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Mon, 08 Jun 2026 08:30:00 -0400

Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
Developed for 3300V, 2300V, and 1200V SiC MOSFET products.

Navitas Semiconductor Corporation (NVTS) files mixed shelf

Mon, 08 Jun 2026 08:18:40 -0400

Navitas Semiconductor Corporation (NASDAQ: NVTS) has filed mixed shelf of:

COMMON STOCK

PREFERRED STOCK

DEBT SECURITIES
WARRANTS

RIGHTS

UNITS

Navitas Semiconductor Corporation (NVTS) files mixed shelf

Mon, 08 Jun 2026 08:18:40 -0400

Navitas Semiconductor Corporation (NASDAQ: NVTS) has filed mixed shelf of:

COMMON STOCK

PREFERRED STOCK

DEBT SECURITIES
WARRANTS

RIGHTS

UNITS

Form S-3ASR Navitas Semiconductor

Mon, 08 Jun 2026 08:17:00 -0400

si-local-file:///var/storage/secattach/20260608/26614686.html

Form S-3ASR Navitas Semiconductor

Mon, 08 Jun 2026 08:17:00 -0400

si-local-file:///var/storage/secattach/20260608/26614686.html

Form 8-K Navitas Semiconductor For: Jun 04

Thu, 04 Jun 2026 16:16:00 -0400

si-local-file:///var/storage/secattach/20260604/26605927.html

Form 8-K Navitas Semiconductor For: Jun 04

Thu, 04 Jun 2026 16:16:00 -0400

si-local-file:///var/storage/secattach/20260604/26605927.html

Form 4 Navitas Semiconductor For: Jun 02 Filed by: Wunderlich Gary Kent JR

Wed, 03 Jun 2026 16:16:00 -0400

si-local-file:///var/storage/secattach/20260603/26599045.html

Form 4 Navitas Semiconductor For: Jun 02 Filed by: Wunderlich Gary Kent JR

Wed, 03 Jun 2026 16:16:00 -0400

si-local-file:///var/storage/secattach/20260603/26599045.html

Navitas showcases 800V power delivery board at NVIDIA MGX ecosystem event

Wed, 03 Jun 2026 08:30:36 -0400

Navitas Semiconductor (NASDAQ: NVTS) participated in NVIDIA's Partner Ceremony on May 29, 2026, at the Taipei Nangang Exhibition Center, demonstrating its 800V-to-6V DC-DC power delivery board at the NVIDIA AI Factory MGX ecosystem showcase during COMPUTEX 2026.

The power delivery board features 16 GaNFast FETs rated at 650V and 11 mOhms in DFN8x8 dual-cooled packages. The board targets 97.5% peak efficiency, operates at 1 MHz switching frequency, and enables a power density of 2100 W/in³. The company states the board is approximately 20% thinner than a mobile phone.

The technology eliminates the need for a traditional 48V intermediate bus converter stage within

Navitas showcases 800V power delivery board at NVIDIA MGX ecosystem event

Wed, 03 Jun 2026 08:30:36 -0400

The technology eliminates the need for a traditional 48V intermediate bus converter stage within

Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI Infrastructure

Wed, 03 Jun 2026 08:30:00 -0400

TORRANCE, Calif., June 03, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast^™ gallium nitride (GaN) and GeneSiC^™ silicon carbide (SiC) power semiconductors, was honored to participate in NVIDIA's Partner Ceremony held on May 29^th, 2026, at the Taipei Nangang Exhibition Center. The event brought together key ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration to accelerate the development of next-generation AI data centers powered by emerging 800 VDC rack architectures.

Navitas’ 800 V-to-6 V DC-DC power delivery board (PDB) is being

Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI Infrastructure

Wed, 03 Jun 2026 08:30:00 -0400

Navitas’ 800 V-to-6 V DC-DC power delivery board (PDB) is being

StreetInsider.com News Articles

Form 8-K Navitas Semiconductor For: Jun 15

Form 8-K Navitas Semiconductor For: Jun 15

Form DEFA14A Navitas Semiconductor

Form DEFA14A Navitas Semiconductor

Navitas Semiconductor board member resigns immediately

Navitas Semiconductor board member resigns immediately

Form 8-K Navitas Semiconductor For: Jun 09

Form 8-K Navitas Semiconductor For: Jun 09

Navitas launches isolated package for SiC MOSFETs with thermal management

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management

Navitas Semiconductor Corporation (NVTS) files mixed shelf

Navitas Semiconductor Corporation (NVTS) files mixed shelf

Form S-3ASR Navitas Semiconductor

Form S-3ASR Navitas Semiconductor

Form 8-K Navitas Semiconductor For: Jun 04

Form 8-K Navitas Semiconductor For: Jun 04

Form 4 Navitas Semiconductor For: Jun 02 Filed by: Wunderlich Gary Kent JR

Form 4 Navitas Semiconductor For: Jun 02 Filed by: Wunderlich Gary Kent JR

Navitas showcases 800V power delivery board at NVIDIA MGX ecosystem event

Navitas showcases 800V power delivery board at NVIDIA MGX ecosystem event

Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI Infrastructure

Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI Infrastructure