Wolfspeed Inc. (NYSE: WOLF) announced its fifth generation silicon carbide MOSFET technology, targeting 1200V and 750V automotive and industrial applications. The Durham, N.C.-based company said the Gen 5 technology achieves up to 27% efficiency improvement over currently available competitive 1200V solutions.

The new technology delivers specific on-resistance performance with the 1200V QEM50120-25D10 achieving a 175°C chip-level RSP of 3.4 mΩ-cm² and the 750V QEM50075-025D10 achieving 2.0 mΩ-cm². Both products feature RDS(ON) distribution of +/- 18% for the voltage nodes.

The MOSFETs operate at junction temperatures of 200°C continuous and 215°C limited life. Wolfspeed stated the technology maintains switching energy performance while reducing overall switching losses through improved reverse recovery charge.

Manufacturing will utilize Wolfspeed's existing 200mm device fabrication facility in Mohawk Valley, N.Y., with no new manufacturing toolsets required for volume production. The company said new product introductions, sampling, and customer validation will be completed using 200mm production material.

"With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we're introducing Gen 5 that gives engineers the most current possible with a 5x5 mm silicon carbide footprint," said Dr. Cengiz Balkas, Wolfspeed Chief Business Officer.

Samples for the QEM50120-025D10 and QEM50075-025D10 are available for select customers through direct sales representatives. Additional 750V to 1200V products are expected to launch throughout 2026 and into early 2027.