onsemi (NASDAQ: ON) announced the launch of its GaNEXUS gallium nitride power portfolio, with initial sampling of devices across voltage ranges from 40V to 650V. The portfolio targets AI data centers, industrial automation, robotics, and energy infrastructure applications.

The GaNEXUS lineup includes standard FETs and GaNEXUS Smart 650V devices with integrated protection features. According to the company, the technology delivers faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared to silicon-based solutions.

The portfolio is designed to work with onsemi's Treo Platform for integrated sensing, control, protection, and power management. In low- and medium-voltage systems, the company states GaNEXUS enables 30-60% smaller magnetics, 1.5x-2x higher power density, and 0.5-2% efficiency improvements depending on topology.

For higher-voltage applications including AI power shelves and high-voltage DC-DC conversion, onsemi claims up to 60% reduction in magnetics size and 0.5-1% efficiency gains. The devices feature thermally enhanced packages with industry-standard footprints including TOLL Bottom Cooling, TOLT Top Cooling, and dual cooling packages.

"Our GaNEXUS portfolio is enabling new architectures for power system design," said Antoine Jalabert, vice president of the GaN division at onsemi. "As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures."

The announcement comes as AI data centers are projected to consume up to 9% of U.S. electricity generation by 2030, with power and cooling costs accounting for up to 40% of total data center operating expenses, according to the press release.