GE Aerospace (NYSE: GE) and Wolfspeed Inc. (NYSE: WOLF) announced they have entered into a memorandum of understanding to collaborate on accelerating the adoption of high-voltage silicon carbide technology across industrial, aerospace and defense markets.

Under the agreement, the companies plan to develop standards for high-voltage silicon carbide-based power modules to support solid-state transformers, industrial electrification, and aerospace and defense platforms. The MOU includes the supply of Wolfspeed's 10 kV MOSFET die and joint determination of standard high-voltage power module formats for commercial introduction.

The collaboration aims to create power modules that enable systems with fewer series-connected devices and reduced complexity, resulting in more compact, efficient and reliable solutions. The companies stated the initiative aligns with U.S. government priorities for accelerating critical technologies in strategic markets including artificial intelligence.

"Together, we're ready to shape a robust value chain of high-power silicon carbide based on a mutual appreciation for achieving smaller, reliable and more efficient high-voltage end systems," said Kris Shepherd, president of Electrical Power for GE Aerospace.

Robert Feurle, CEO at Wolfspeed, said the partnership addresses market demands as "AI, electrification, and defense platforms push power demands higher and timelines shorter."

GE Aerospace recently qualified high-voltage power units for U.S. military ground vehicles and demonstrated fourth-generation silicon carbide power MOSFET devices at its research center in Niskayuna, New York. Wolfspeed manufactures silicon carbide on 200 mm wafers and recently introduced what it describes as the world's first commercially available 10 kV SiC MOSFET.

The information is based on a joint press release from the companies.