Micron Technology Inc. (NASDAQ: MU) announced it has begun sampling 256GB DDR5 registered dual in-line memory modules to server ecosystem partners. The modules are built on the company's 1-gamma technology and support speeds up to 9,200 megatransfers per second.

The modules use advanced packaging techniques and 3D stacking technology that connects multiple memory dies through silicon vias. According to Micron, a single 256GB module reduces operating power by more than 40% compared to two 128GB modules.

The company is working with ecosystem partners to validate the modules across current and next-generation server platforms. This validation process aims to ensure platform compatibility and accelerate deployment for data center customers building AI and high-performance computing infrastructure.

"Capacity, bandwidth, and power are the defining drivers of AI efficiency," said Raj Narasimhan, senior vice president and general manager of the Cloud Memory Business Unit at Micron. "Built on our 1-gamma DRAM using advanced 3DS and TSV packaging, this solution delivers industry-leading speed and power efficiency."

The modules are designed to address memory demands from large language models, AI applications, real-time inference and high-core-count CPU workloads. Micron states the technology enables server architects and hyperscale operators to maximize memory capacity per socket while operating within thermal and power constraints of modern data centers.

The 256GB DDR5 modules are currently in the sampling phase with key server ecosystem enablers for platform validation, according to the company's press release.