GlobalFoundries partners with Navitas to expand US GaN manufacturing
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GlobalFoundries (NASDAQ: GFS) and Navitas Semiconductor (NASDAQ: NVTS) announced a long-term strategic partnership to develop and manufacture gallium nitride technology in the United States. The collaboration will focus on producing advanced GaN solutions for AI datacenters, performance computing, energy infrastructure and industrial applications.
The partnership will utilize GlobalFoundries' Burlington, Vermont facility for manufacturing next-generation GaN technology, combining the foundry's high-voltage GaN-on-Silicon expertise with Navitas' GaN device technology. Development is scheduled to begin in early 2026, with production expected to start later that year.
Navitas Semiconductor specializes in GaN and high-voltage silicon carbide technologies and has deployed GaN solutions in mobile fast chargers, consumer electronics, electric vehicles and energy storage systems. The company is working to expand GaN adoption in high-power markets.
"GaN is transforming how the world moves power. And this partnership represents a significant step forward for U.S. semiconductor leadership and the deployment of GaN technology to address essential applications," said Tim Breen, CEO of GlobalFoundries.
Chris Allexandre, President and CEO of Navitas, stated that "GaN adoption is accelerating in high power semiconductor markets such as AI datacenters, performance computing, energy and grid infrastructures and industrial electrification, and our collaboration and partnership with GF ensures that Navitas can deliver the performance, efficiency and scale our customers demand."
The partnership aims to provide customers with a domestic supply chain for GaN technologies while supporting applications in national security and energy sustainability sectors. GlobalFoundries operates manufacturing facilities across the United States, Europe and Asia.
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